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| 2SK2698 Silicon N-Channel MOSFET Features 18A,500V,RDS(on)(Max0.265)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited power supplies, DC-DC for AC-DC switching powerConverters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) 12.7 80 30 330 27.7 4.5 280 -55~150 300 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 500 18 Units V A Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.24 - Max 0.45 40 Units /W /W /W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. 2SK2698 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=18A (Note4,5) nC 12 14 tf toff VDD=400V, 42 55 Symbol IGSS V(BR)GSS IDSS V(BR)DSS BVDSS/ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=25V,VDS=0V IG=10 A,VDS=0V VDS=500V,VGS=0V ID=10 mA,VGS=0V ID=250A,Referenced Min 30 500 - Type 0.5 0.225 16 2530 11 300 40 150 95 110 Max 10 100 4 0.265 3290 14.3 390 90 310 Unit nA V A V V/ V S to 25 VDS=10V,ID=1mA VGS=10V,ID=10A VDS=40V,ID=10A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=18A RG=25 (Note4,5) 2 - pF ns 200 230 Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=18A,VGS=0V IDR=18A,VGS=0V, dIDR / dt =100 A / s Min - Type 1.6 20 Max 18 27 -1.9 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=1.83mH IAS=18A,VDD=50V,RG=25,Starting TJ=25 3.ISD18A,di/dt200A/us,VDD Steady, all for your advance 2SK2698 Fig.1 On State Characteristics Fig.2 Transfer Current Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature Fig.5 Capacitance Characteristics Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance 2SK2698 Fig.7 Breakdown Voltage Variation Fig.8 On-Resistance Variation vs.Temperature Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs Case Temperature Fig.11 Transient Thermal Response Curve Fig.11 4/7 Steady, all for your advance 2SK2698 Fig.12 Gate Test Circuit & Waveform Fig.12 Fig.13 Resistive Switching Test Circuit & Waveform Fig.13 Fig.14 Unclamped Inductive Switching Test Circuit & Waveform Fig.14 5/7 Steady, all for your advance 2SK2698 Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform Fig.15 6/7 Steady, all for your advance 2SK2698 TO-3P Package Dimension TO-3P Unit:mm 7/7 Steady, all for your advance |
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